12-Inch 300 mm 4H-SiC Wafer, 750 ± 25 μm

Product overview

The reference listing describes a 300 mm (12-inch) SiC wafer with a 750 ± 25 μm thickness example. Listed options include 4H-SiC or 6H-SiC, N-type or semi-insulating conductivity, on-axis or off-axis 4° orientation, and single-wafer-container packaging. Resistivity and micropipe limits vary by listed variant; confirm the exact grade, inspection values, and production status before quotation.

Application areas

Typical project discussions include power-device substrates, RF device development, epitaxial growth, and high-temperature electronics.

Specification options

The following details can be reviewed for this product:

• 300 mm / 12 inch
• 4H-SiC or 6H-SiC listed options
• 750 ± 25 μm thickness example
• N-type or semi-insulating listed options
• On-axis <0001> or off-axis 4° listed options
• Resistivity and micropipe density depend on grade
• Single-wafer-container packaging listed

What to include in your inquiry

Please send the required dimensions, material grade or type, tolerance, surface condition, quantity, intended application, and target delivery date. A drawing or inspection checklist is helpful for custom geometries.

Availability and quality confirmation

Reference page lists 300 mm and 750 ± 25 μm examples; exact variant, current availability, inspection limits, and delivery must be confirmed. Inspection points and document format should be agreed before order confirmation; no unverified stock or certification claim is implied.