4-Inch HPSI SiC Wafer, 350 μm
High-purity semi-insulating silicon carbide wafer listed in a 4-inch, 350 μm example for AR-glass and semiconductor development. Confirm resistivity, polytype, surface finish, and availability for the required lot.
Specification checklist
- 4-inch nominal diameter listed;350 μm example thickness listed;High-purity semi-insulating SiC;Polytype and resistivity by confirmation;Orientation and surface finish by confirmation;Defect criteria and documentation by agreement
Availability: Specification and production status confirmed by request
Product overview
A 4-inch high-purity semi-insulating SiC wafer option shown in the reference catalog with a 350 μm example thickness. The exact polytype, resistivity range, orientation, surface finish, and wafer grade must be confirmed for the intended device or optical process. Include the required inspection limits and test documents in the RFQ.
Application areas
Typical project discussions include power-device substrates, RF device development, epitaxial growth, and high-temperature electronics.
Specification options
The following details can be reviewed for this product:
- 4-inch nominal diameter listed
- 350 μm example thickness listed
- High-purity semi-insulating SiC
- Polytype and resistivity by confirmation
- Orientation and surface finish by confirmation
- Defect criteria and documentation by agreement
What to include in your inquiry
Please send the required dimensions, material grade or type, tolerance, surface condition, quantity, intended application, and target delivery date. A drawing or inspection checklist is helpful for custom geometries.
Availability and quality confirmation
Specification and production status confirmed by request Inspection points and document format should be agreed before order confirmation; no unverified stock or certification claim is implied.
Request a Quote for 4-Inch HPSI SiC Wafer, 350 μm
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