SiC substrate formats for power electronics, RF, epitaxy, and device development.
Large-diameter silicon carbide wafer based on the reference listing for 300 mm / 12-inch research-grade substrates. Polytype, conductivity, orientation, thickness, resistivity, defect…
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High-purity semi-insulating silicon carbide wafer listed in a 4-inch, 350 μm example for AR-glass and semiconductor development. Confirm resistivity, polytype, surface finish,…
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8-inch SiC epitaxial wafer option for power-device and semiconductor development. Specify substrate polytype, conductivity, epi stack, layer thickness, doping, and inspection requirements.
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