Semiconductor & Specialty Substrates

GaN-on-Sapphire Epitaxy Template, 2–8 Inch

GaN epitaxy template on sapphire listed in 2-, 4-, 6-, and 8-inch formats. Specify wafer diameter, sapphire orientation, GaN/AlN layer structure, thickness, doping, and inspection criteria.

Specification checklist

  • 2-, 4-, 6-, and 8-inch formats listed;Sapphire substrate;GaN-on-sapphire epitaxy template;Orientation and buffer-layer structure by confirmation;GaN thickness and doping by specification;Bow, warp and defect limits by agreement

Availability: Custom specification; confirm current supply before order

Product overview

A GaN-on-sapphire epitaxy template option shown in several wafer diameters. The correct structure depends on the device and epitaxial process. State the wafer diameter, sapphire orientation, buffer or AlN layers, GaN thickness and doping, surface condition, bow/warp limits, and defect or inspection criteria. Confirm the stack and available lot before placing an order.

Application areas

Typical project discussions include MEMS, photonics, optoelectronics, advanced packaging, and thermal management.

Specification options

The following details can be reviewed for this product:

  • 2-, 4-, 6-, and 8-inch formats listed
  • Sapphire substrate
  • GaN-on-sapphire epitaxy template
  • Orientation and buffer-layer structure by confirmation
  • GaN thickness and doping by specification
  • Bow, warp and defect limits by agreement

What to include in your inquiry

Please send the required dimensions, material grade or type, tolerance, surface condition, quantity, intended application, and target delivery date. A drawing or inspection checklist is helpful for custom geometries.

Availability and quality confirmation

Custom specification; confirm current supply before order Inspection points and document format should be agreed before order confirmation; no unverified stock or certification claim is implied.

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